Datasheet4U Logo Datasheet4U.com

2N3713 - SILICON NPN TRANSISTORS

General Description

The CENTRAL SEMICONDUCTOR 2N3713, 2N3714, 2N3715, and 2N3716 are silicon NPN power transistors manufactured by the epitaxial-base process, mounted in a hermetically sealed metal package designed for medium speed switching and amplifier applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2N3713 Silicon NPN Power Transistor Inchange Semiconductor
2N3713 GENERAL PURPOSE POWER TRANSISTOR Toshiba
2N3713 NPN silicon power transistors Motorola
2N3713 Bipolar NPN Device Seme LAB
2N3713 EPITAXIAL-BASE TRANSISTORS Comset Semiconductor

Other Datasheets by Central Semiconductor

Part Number Description
2N3714 SILICON NPN TRANSISTORS
2N3715 SILICON NPN TRANSISTORS
2N3716 SILICON NPN TRANSISTORS
2N3700 NPN TRANSISTORS
2N3701 NPN TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N3713 2N3715 2N3714 2N3716 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3713, 2N3714, 2N3715, and 2N3716 are silicon NPN power transistors manufactured by the epitaxial-base process, mounted in a hermetically sealed metal package designed for medium speed switching and amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg JC 2N3713 2N3715 80 2N3714 2N3716 100 60 80 7.0 10 4.0 150 -65 to +200 1.