ABSOLUTE MAXIMUM RATINGS
Symbol VCBO Collector-BaseVoltage Ratings IE = 0 2N3713 2N3715 2N3714 2N3716 2N3713 2N3715 2N3714 2N3716 Value 80 Unit V 100 60 V 80 7.0 10 4.0 150 -65 to +200 V A A W °C VCEO VEBO IC IB PD TJ TS Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current IB = 0 IC = 0 Total Device Dissipation @ TC = 25° Junction Temperature Storage Temperature THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case (Max) Value 1.17 Unit °C/W 05/11/2012 COMSET SEMICONDUCTORS 1|4 Datasheet pdf - NPN 2N3713 – 2N3714 – 2N3715 – 2N3716 ELETRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage Test Condition(s) 2N3713 2N3715 IC=200 mA, IB=0 (*) 2N3714 2N3716 2N3713 2N3715 IC=200 mA, IB=0 (*) 2N3714 2N3716 2N3713 VCE=30 V, IB=0 2N3715 2N3714 VCE=40 V, IB=0 2N3716 2N3713 VCE=80 V, VEB=-1.5 V 2N3715 2N3714 VCE=100 V, VEB=-1.5 V 2N3716 VCE=60 V, VEB=-1.5 V 2N3713 TC = 150°C 2N3715 VCE=80 V, VEB...
Comset Semiconductor
