Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N3740 2N3741
DESCRIPTION
With TO-66 package
Excellent safe area limits
Low collector saturation voltage
APPLICATIONS
Suitable for use in as drivers,switches and
medium-power amplifier and applications
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N3740
2N3741
VCEO
2N3740
Collector-emitter voltage
2N3741
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-Peak
IB Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-60
-80
-60
-80
-7
-4
-10
-2
25
150
-65~200
UNIT
V
V
V
A
A
mA
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance from junction to case
MAX
7.0
UNIT
/W
