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Inchange Semiconductor

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2N3741 Datasheet

Silicon PNP Power Transistors

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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N3740 2N3741
DESCRIPTION
With TO-66 package
Excellent safe area limits
Low collector saturation voltage
APPLICATIONS
Suitable for use in as drivers,switches and
medium-power amplifier and applications
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N3740
2N3741
VCEO
2N3740
Collector-emitter voltage
2N3741
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-Peak
IB Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-60
-80
-60
-80
-7
-4
-10
-2
25
150
-65~200
UNIT
V
V
V
A
A
mA
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance from junction to case
MAX
7.0
UNIT
/W




Inchange Semiconductor

2N3741 Datasheet Preview

2N3741 Datasheet

Silicon PNP Power Transistors

No Preview Available !

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N3740 2N3741
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2N3740
2N3741
IC=-100mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-125mA
VBE Base -emitter on voltage
IC=-0.25A ; VCE=-1V
ICEX
Collector
cut-off current
2N3740
2N3741
VCE=-60V;VBE(off)=-1.5V
VCE=-40V;VBE(off)=-1.5V;TC=150
VCE=80V;VBE(off)=1.5V
VCE=60V;VBE(off)=1.5V;TC=150
ICEO
Collector
cut-off current
2N3740 VCE=-40V; IB=0
2N3741 VCE=-60V; IB=0
ICBO
Collector
cut-off current
2N3740 VCB=-60V; IE=0
2N3741 VCB=-80V; IE=0
IEBO Emitter cut-off current
VEB=-7V; IC=0
hFE-1
DC current gain
IC=-0.1A ; VCE=-1V
hFE-2
DC current gain
IC=-0.25A ; VCE=-1V
hFE-3
DC current gain
IC=-0.5A ; VCE=-1V
hFE-4
DC current gain
IC=-1A ; VCE=-1V
fT Transition frequency
IC=-0.1A ; VCE=-10V;f=1.0MHz
COB Output capacitance
IE=0 ; VCB=-10V;f=100kHz
MIN TYP. MAX UNIT
-60
V
-80
-0.6 V
-1.0 V
-0.1
-1.0
mA
-0.1
-1.0
-1.0 mA
-0.1 mA
-0.5 mA
40
30 100
20
10
3.0 MHz
100 pF
2


Part Number 2N3741
Description Silicon PNP Power Transistors
Maker Inchange Semiconductor
Total Page 3 Pages
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