Datasheet Details
| Part number | 2N4348 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.32 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2N4348 Download (PDF) |
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| Part number | 2N4348 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.32 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2N4348 Download (PDF) |
|
|
|
·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·The device employs the popular JEDEC TO-3 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·High voltage high current power transistors ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage 140 V Collector-Emitter Voltage 120 V Emitter-Base Voltage 7 V Collector Current-Continuous 10 A Collector Power Dissipation@TC=25℃ 120 W Junction Temperature 200 ℃ Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.46 ℃/W 2N4348 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=200mA;
IB= 0 ICEO Collector Cutoff Current VCE=100V;IB= 0 IEBO Emitter Cutoff Current VEB= 7V;
isc Silicon NPN Power Transistor.
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