| Part number | 2N6666 |
|---|---|
| Datasheet | 2N6666-InchangeSemiconductor.pdf |
| File Size | 82.43 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon PNP Darlington Power Transistor |
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hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -3A ·plement to Type 2N6386 APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2N6666 | Silicon PNP Transistors | NTE |
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