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2N6666 Datasheet - Inchange Semiconductor

Silicon PNP Darlington Power Transistor

2N6666 General Description

*High DC Current Gain- : hFE = 1000(Min)@ IC= -3A *Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min) *Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -3A *Complement to Type 2N6386 APPLICATIONS *Designed for general purpose amplifier and low sp.

2N6666 Datasheet (82.43 KB)

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Datasheet Details

Part number:

2N6666

Manufacturer:

Inchange Semiconductor

File Size:

82.43 KB

Description:

Silicon pnp darlington power transistor.

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2N6666 Silicon PNP Darlington Power Transistor Inchange Semiconductor

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