Datasheet Details
| Part number | 2N6666 |
|---|---|
| Manufacturer | NTE Electronics (defunct) |
| File Size | 64.42 KB |
| Description | Silicon PNP Transistors |
| Datasheet |
 2N6666 Datasheet
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General Description
The 2N6666, 2N6667, and 2N6668 are silicon PNP Darlington power transistors in a TO
220 type package designed for general purpose amplifier and low
speed switching applications.
Key Features
- D DC Current Gain: hFE = 3000 (Typ) @ IC = 4A D Collector.
- Emitter Sustaining Voltage: VCEO(sus) = 40V (Min).
- 2N6666 = 60V (Min).
- 2N6667 = 80V (Min).
- 2N6668 D Low Collector.
- Emitter Saturation Voltage: VCE(sat) = = 2V 2V Max Max @ @ IICC = = 3A 5A.
- 2N6666 2N6667, 2N6668 Absolute Maximum Ratings: Collector.
- Emitter 2N6666 . . Voltage, V. . C. E. O.