Description
The 2N6666, 2N6667, and 2N6668 are silicon PNP Darlington power transistors in a TO
220 type package designed for general purpose amplifier and low
speed switching applications.
Features
- D DC Current Gain: hFE = 3000 (Typ) @ IC = 4A
D Collector.
- Emitter Sustaining Voltage:
VCEO(sus)
= 40V (Min).
- 2N6666 = 60V (Min).
- 2N6667
= 80V (Min).
- 2N6668
D Low Collector.
- Emitter Saturation Voltage:
VCE(sat)
= =
2V 2V
Max Max
@ @
IICC
= =
3A 5A.
- 2N6666 2N6667,
2N6668
Absolute Maximum Ratings:
Collector.
- Emitter 2N6666 . . Voltage,
V. . C. E. O.
2N6666 Datasheet
