2N6661 Datasheet | Motorola Semiconductor

2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661 N-CHANNEL ENHANCEMENT-MODE TMOS POWER FIELD-EFFECT TRANSISTOR These TMOS Power FETs are designed. for high-current, high- speed power switching applications such as switching power sup- plies, ,CMOS logic, microprocessor or ~L-to-tiigh current .,interface and line drivers. ,,,. 0 Fast Switching Speed - ton = toff = 5.0 ns Max 0 LOW an-Resistance - 1.5 Ohm Typ - 2N66591MPF6659 2.0 Ohm Typ - 2N6660/2N6661 - MPF6660/MPF6661 o Low Drive Requirement, VGS(th) = 2.0 V Max e Inherent Current Sharing Capability Permits Easy Paralleling of Many Devices q CASE79-02 TO-205AD (TO-391 q Drain Curre@~~J-’ Continu- s (~)w Puls@- 2F’:- $ ,,:-...