Motorola 2N6668
DARLINGTON POWER TRANSISTORS
MAXIMUM RATINGS
(1) Rating Symbol VCEO VCB VEB IC IB 2N6667 60 60 2N6668 80 80 Unit Vdc Vdc Vdc Adc Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage 5 Collector Current — Continuous — Peak Base Current 10 15 250 mAdc watts W/_ C Total Device Dissipation @ TC = 25_ C Derate above 25_ C Total Device Dissipation @ TA = 25_ C Derate above 25_ C PD PD 65 0.52 2 0.016 Watts W/_ C _C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 150 THERMAL CHARACTERISTICS Characteristic Symbol RθJC RθJA Max Unit Thermal Resistance, Junction to Case 1.92 62.5 _ C/W _ C/W Thermal Resistance, Junction to Ambient (1) Indicates JEDEC Registered Data. REV 1 © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 3–1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ...