2N6668
Description
The 2N6666, 2N6667, and 2N6668 are silicon PNP Darlington power transistors in a TO-220 type package designed for general purpose amplifier and low-speed switching applications.
Key Features
- DC Current Gain: hFE = 3000 (Typ) @ IC = 4A
- Collector-Emitter Sustaining Voltage: VCEO(sus) = 40V (Min) - 2N6666 = 60V (Min) - 2N6667 = 80V (Min) - 2N6668
- Low Collector-Emitter Saturation Voltage: VCE(sat) = = 2V 2V Max Max @ @ IICC = = 3A 5A - -
