2N6667 Datasheet | NTE Electronics

Part: 2N6667
Description: Silicon PNP Transistors
Category: Transistor
Manufacturer: NTE Electronics
Size: 64.42 KB

NTE Electronics

2N6667

Description

The 2N6666, 2N6667, and 2N6668 are silicon PNP Darlington power transistors in a TO-220 type package designed for general purpose amplifier and low-speed switching applications.

Key Features

DC Current Gain: hFE = 3000 (Typ) @ IC = 4A
Collector-Emitter Sustaining Voltage: VCEO(sus) = 40V (Min) - 2N6666 = 60V (Min) - 2N6667 = 80V (Min) - 2N6668
Low Collector-Emitter Saturation Voltage: VCE(sat) = = 2V 2V Max Max @ @ IICC = = 3A 5A - -

Datasheets by Manufacturer

2N6667 — Motorola Semiconductor — DARLINGTON POWER TRANSISTORS
2N6667 — Inchange Semiconductor — Silicon PNP Power Transistor
2N6667 — onsemi — DARLINGTON POWER TRANSISTORS
2N6661 — Motorola Semiconductor — TMOS SWITCHING FET TRANSISTORS
2N6668 — STMicroelectronics — SILICON PNP POWER DARLINGTON TRANSISTOR
2N6660X — Seme LAB — N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR
2N6660 — Vishay — N-Channel MOSFET
2N6660JANTXV — Vishay — N-Channel MOSFET
2N6666 — Inchange Semiconductor — Silicon PNP Darlington Power Transistor
2N6660 — TT Electronics — N-Channel Enhancement Mode Power MOSFET