Datasheet4U Logo Datasheet4U.com

2N6667 - Silicon PNP Transistors

Download the 2N6667 datasheet PDF. This datasheet also covers the 2N6666 variant, as both devices belong to the same silicon pnp transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

The 2N6666, 2N6667, and 2N6668 are silicon PNP Darlington power transistors in a TO 220 type package designed for general purpose amplifier and low

speed switching applications.

Key Features

  • D DC Current Gain: hFE = 3000 (Typ) @ IC = 4A D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 40V (Min).
  • 2N6666 = 60V (Min).
  • 2N6667 = 80V (Min).
  • 2N6668 D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = = 2V 2V Max Max @ @ IICC = = 3A 5A.
  • 2N6666 2N6667, 2N6668 Absolute Maximum Ratings: Collector.
  • Emitter 2N6666 . . Voltage, V. . C. E. O.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N6666-NTE.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N6667
Manufacturer NTE Electronics (defunct)
File Size 64.42 KB
Description Silicon PNP Transistors
Datasheet download datasheet 2N6667 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2N6667 DARLINGTON POWER TRANSISTORS ON Semiconductor
2N6667 DARLINGTON POWER TRANSISTORS Motorola
2N6667 Silicon PNP Power Transistor Inchange Semiconductor
2N6660 N-Channel Enhancement-Mode Vertical DMOS FETs Supertex Inc
2N6660 TMOS SWITCHING FET TRANSISTORS Motorola Inc

Other Datasheets by NTE Electronics (defunct)

Part Number Description
2N6666 Silicon PNP Transistors
2N6668 Silicon PNP Transistors
2N6609 Silicon PNP Transistor
2N6028 Programmable Unijunction Transistor
2N6052 Silicon PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N6666, 2N6667, 2N6668 Silicon PNP Transistors Darlington Power Amplifier TO−220 Type Package Description: The 2N6666, 2N6667, and 2N6668 are silicon PNP Darlington power transistors in a TO−220 type package designed for general purpose amplifier and low−speed switching applications. Features: D DC Current Gain: hFE = 3000 (Typ) @ IC = 4A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 40V (Min) − 2N6666 = 60V (Min) − 2N6667 = 80V (Min) − 2N6668 D Low Collector−Emitter Saturation Voltage: VCE(sat) = = 2V 2V Max Max @ @ IICC = = 3A 5A − − 2N6666 2N6667, 2N6668 Absolute Maximum Ratings: Collector−Emitter 2N6666 . . Voltage, ........ V. .C.E.O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .