| Part number | 2N6667 |
|---|---|
| Download | 2N6667 Datasheet (PDF) |
| File Size | 144.47 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
onsemi |
2N6667 | DARLINGTON POWER TRANSISTORS |
Motorola Semiconductor |
2N6667 | DARLINGTON POWER TRANSISTORS |
NTE Electronics (defunct) |
2N6667 | Silicon PNP Transistors |
hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -5A ·plement to Type 2N6387 APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
