2N6668
Description
High DC Current Gain- : hFE = 1000(Min)@ IC= -5A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -5A Complement to Type 2N6388.
- Part: 2N6668
- Description: Silicon PNP Power Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 144.52 KB