Download 2N6668 Datasheet PDF
2N6668 page 2
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Datasheet Summary

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification DESCRIPTION - High DC Current Gain- : hFE = 1000(Min)@ IC= -5A - Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min) - Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -5A - plement to Type 2N6388 APPLICATIONS - Designed for general purpose amplifier and low speed switching...