• Part: 2N6666
  • Description: Silicon PNP Darlington Power Transistor
  • Manufacturer: Inchange Semiconductor
  • Size: 82.43 KB
Download 2N6666 Datasheet PDF
2N6666 page 2
Page 2

Datasheet Summary

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification DESCRIPTION - High DC Current Gain- : hFE = 1000(Min)@ IC= -3A - Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min) - Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -3A - plement to Type 2N6386 APPLICATIONS - Designed for general purpose amplifier and low speed switching...