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2N6666

2N6666 is Silicon PNP Darlington Power Transistor manufactured by Inchange Semiconductor.
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2N6666 Datasheet

Part number 2N6666
Download 2N6666 Datasheet (PDF)
File Size 82.43 KB
Manufacturer Inchange Semiconductor
Description Silicon PNP Darlington Power Transistor
2N6666 page 2

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Manufacturer Part Number Description
NTE Logo NTE Electronics (defunct) 2N6666 Silicon PNP Transistors

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2N6666 Description

hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -3A ·plement to Type 2N6386 APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

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