2N6666
Description
High DC Current Gain- : hFE = 1000(Min)@ IC= -3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -3A Complement to Type 2N6386.
- Part: 2N6666
- Description: Silicon PNP Darlington Power Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 82.43 KB
Datasheets by Manufacturer
- 2N6661 — Supertex Inc — N-Channel Enhancement-Mode Vertical DMOS FETs
- 2N6661 — Vishay — N-Channel MOSFET
- 2N6667 — onsemi — DARLINGTON POWER TRANSISTORS
- 2N6660JAN — Vishay — N-Channel MOSFET
- 2N6668 — Motorola Semiconductor — DARLINGTON POWER TRANSISTORS
- 2N6668 — NTE Electronics — Silicon PNP Transistors
- 2N6660 — Microchip Technology — N-Channel Enhancement-Mode Vertical DMOS FET
- 2N6660 — Seme LAB — N-CHANNEL ENHANCEMENT MODE POWER MOSFET
- 2N6661JANTX — Vishay — N-Channel MOSFET
- 2N6661JANTXV — Vishay — N-Channel MOSFET