Datasheet Details
| Part number | 2N6661 |
|---|---|
| Manufacturer | Supertex Inc |
| File Size | 302.50 KB |
| Description | N-Channel Enhancement-Mode Vertical DMOS FETs |
| Datasheet | 2N6661_SupertexInc.pdf |
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Overview: Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS.
| Part number | 2N6661 |
|---|---|
| Manufacturer | Supertex Inc |
| File Size | 302.50 KB |
| Description | N-Channel Enhancement-Mode Vertical DMOS FETs |
| Datasheet | 2N6661_SupertexInc.pdf |
|
|
|
The Supertex 2N6661 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.
This bination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
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2N6661 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | TT |
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2N6661 | N-Channel Power MOSFET | VPT |
| Part Number | Description |
|---|---|
| 2N6660 | N-Channel Enhancement-Mode Vertical DMOS FETs |