• Part: 2N6661
  • Description: N-Channel Enhancement-Mode Vertical DMOS FETs
  • Manufacturer: Supertex Inc
  • Size: 302.50 KB
Download 2N6661 Datasheet PDF
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Datasheet Summary

Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Features - - Free from secondary breakdown - - Low power drive requirement - - Ease of paralleling - - Low CISS and fast switching speeds - - Excellent thermal stability - - Integral source-drain diode - - High input impedance and high gain - - Hi-Rel processing available General Description The Supertex 2N6661 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This bination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS...