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2N6660 - N-Channel Enhancement-Mode Vertical DMOS FETs

General Description

The Supertex 2N6660 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.

Key Features

  • Free from secondary breakdown.
  • Low power drive requirement.
  • Ease of paralleling.
  • Low CISS and fast switching speeds.
  • Excellent thermal stability.
  • Integral source-drain diode.
  • High input impedance and high gain.
  • Hi-Rel processing available.

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Datasheet Details

Part number 2N6660
Manufacturer Supertex Inc
File Size 294.12 KB
Description N-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet 2N6660 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features ►►Free from secondary breakdown ►►Low power drive requirement ►►Ease of paralleling ►►Low CISS and fast switching speeds ►►Excellent thermal stability ►►Integral source-drain diode ►►High input impedance and high gain ►►Hi-Rel processing available Applications ►►Motor controls ►► Converters ►► Amplifiers ►► Switches ►►Power supply circuits ►►Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) General Description The Supertex 2N6660 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.