2N6660 - N-Channel Power MOSFET

VPT

Key Features

s Low On-Resistance, Fast Switching Speed and Low Threshold.
Low Input Capacitance.
Ideal for Hi-Rel Solid-State Relays, Battery Operated Systems and Driver.

2N6660 n-channel power mosfet by VPT - Datasheet Preview

Datasheet Details

Part number	2N6660
Manufacturer	VPT
File Size	527.22 KB
Description	N-Channel Power MOSFET
Datasheet	2N6660 Datasheet

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Other Datasheets by VPT

Part Number	Description
2N6661	N-Channel Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N6660, 2N6661 N Channel Power MOSFET Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/547 • Features Low On-Resistance, Fast Switching Speed and Low Threshold • Low Input Capacitance • Ideal for Hi-Rel Solid-State Relays, Battery Operated Systems and Driver Applications for Relays, Solenoids, Lamps, Displays, Memories, etc. • TO-39 (TO-205AD) and Surface Mount UB Package Types Rev. V2 Electrical Characteristics (TA = 25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Drain-Source Breakdown Voltage VDS = 0, IG = 1.0 µA dc 2N6660, UB VDS = 0, IG = 1.0 µA dc 2N6661, UB VDS V dc 60 90 — Gate-Source Threshold Voltage Gate Current Zero Gate Voltage Drain Current VDS = VGS, ID = 1 mA dc VGS (th) V dc 0.8 2.