2N6661 - N-Channel Power MOSFET

VPT

Download the 2N6661 datasheet PDF. This datasheet also covers the 2N6660 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

s Low On-Resistance, Fast Switching Speed and Low Threshold.
Low Input Capacitance.
Ideal for Hi-Rel Solid-State Relays, Battery Operated Systems and Driver.

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2N6661 n-channel power mosfet by VPT - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2N6660-VPT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2N6661
Manufacturer	VPT
File Size	527.22 KB
Description	N-Channel Power MOSFET
Datasheet	2N6661 Datasheet

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Other Datasheets by VPT

Part Number	Description
2N6660	N-Channel Power MOSFET
2N6648	PNP Silicon Power Darlington Transistors
2N6649	PNP Silicon Power Darlington Transistors
2N6650	PNP Silicon Power Darlington Transistors
2N6674	NPN High Power Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2N6660, 2N6661 N Channel Power MOSFET Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/547 • Features Low On-Resistance, Fast Switching Speed and Low Threshold • Low Input Capacitance • Ideal for Hi-Rel Solid-State Relays, Battery Operated Systems and Driver Applications for Relays, Solenoids, Lamps, Displays, Memories, etc. • TO-39 (TO-205AD) and Surface Mount UB Package Types Rev. V2 Electrical Characteristics (TA = 25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Drain-Source Breakdown Voltage VDS = 0, IG = 1.0 µA dc 2N6660, UB VDS = 0, IG = 1.0 µA dc 2N6661, UB VDS V dc 60 90 — Gate-Source Threshold Voltage Gate Current Zero Gate Voltage Drain Current VDS = VGS, ID = 1 mA dc VGS (th) V dc 0.8 2.