Datasheet Summary
2N6660, 2N6661
N Channel Power MOSFET
Features
- Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/547
- Features
Low On-Resistance, Fast Switching Speed and Low Threshold
- Low Input Capacitance
- Ideal for Hi-Rel Solid-State Relays, Battery Operated Systems and Driver
Applications for Relays, Solenoids, Lamps, Displays, Memories, etc.
- TO-39 (TO-205AD) and Surface Mount UB Package Types
Rev. V2
Electrical Characteristics (TA = 25oC unless otherwise noted)
Parameter
Test Conditions
Symbol Units Min.
Max.
Drain-Source Breakdown Voltage
VDS = 0, IG = 1.0 µA dc 2N6660, UB VDS = 0, IG = 1.0 µA dc 2N6661, UB
VDS V dc
60 90
- Gate-Source Threshold Voltage Gate Current
Zero...
