| Part number | 2N6660 |
|---|---|
| Datasheet | 2N6660-SemeLAB.pdf |
| File Size | 83.78 KB |
| Manufacturer | Seme LAB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Pulse width limited by maximum junction temperature (2) Pulse Width ≤ 300us, δ ≤ 2% Min. Units 25 °C/W 172 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2N6660 | N-Channel Enhancement-Mode Vertical DMOS FETs | Supertex Inc |
 |
2N6660 | TMOS SWITCHING FET TRANSISTORS | Motorola Inc |
 |
2N6660 | N-Channel Enhancement Mode Power MOSFET | TT |
 |
2N6660 | N-Channel Power MOSFET | VPT |
 |
2N6660 | N-Channel MOSFET | Vishay Siliconix |
| Part Number | Description |
|---|---|
| 2N6660X | N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
| 2N6661 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 2N6653 | Bipolar NPN Device |
| 2N6654 | Bipolar NPN Device |
| 2N6655 | Bipolar NPN Device |
| 2N6659 | N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
| 2N6671 | Bipolar NPN Device |
| 2N6672 | Bipolar NPN Device |
| 2N6673 | Bipolar NPN Device |
| 2N6675 | Bipolar NPN Device |
