2N6661
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661 • VDSS = 90V , ID = 0.9A, RDS(ON) = 4.0Ω • Fast Switching • Low Threshold Voltage (Logic Level) • Low CISS • Integral Source-Drain Body Diode • Hermetic...
- Part: 2N6661
- Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
- Category: MOSFET
- Manufacturer: Seme LAB
- Size: 75.04 KB
Datasheets by Manufacturer
- 2N6661 — Motorola Semiconductor — TMOS SWITCHING FET TRANSISTORS
- 2N6661 — TT Electronics — N-CHANNEL ENHANCEMENT MODE POWER MOSFET
- 2N6661 — Supertex Inc — N-Channel Enhancement-Mode Vertical DMOS FETs
- 2N6661 — Vishay — N-Channel MOSFET
- 2N6661JANTX — Vishay — N-Channel MOSFET
- 2N6661JANTXV — Vishay — N-Channel MOSFET
- 2N6661 — Microchip Technology — N-Channel Enhancement-Mode Vertical DMOS FET
- 2N6661 — VPT Components — N-Channel Power MOSFET
- 2N6660 — Motorola Semiconductor — TMOS SWITCHING FET TRANSISTORS
- 2N6668 — STMicroelectronics — SILICON PNP POWER DARLINGTON TRANSISTOR