Microchip Technology 2N6661
2N6661 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a wellproven silicon-gate manufacturing process. This combination produces a device with the power-handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices.| Part No. | 2N6661 |
|---|---|
| Datasheet | 2N6661 Download |
| Manufacturer |  Microchip Technology |
| Description | N-Channel Enhancement-Mode Vertical DMOS FET |
| Buy | Stock & Price |
FEATURES
● Free from secondary breakdown● Low power drive requirement
● Ease of paralleling
● Low CISS and fast switching speeds
● Excellent thermal stability
● Integral source-drain diode
● High input impedance and high gain
APPLICATIONS
● Motor controls● Converters
● Amplifiers
● Switches
● Power supply circuits
● Drivers: relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.
DESCRIPTION
Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where verylow threshold voltage, high breakdown voltage, highinput impedance, low-input capacitance, and fast switching speeds are desired. Package Types GATE SOURCE DRAIN TO-39 Case: Drain See Table 2-1 for pin information 2016 Microchip Technology Inc. DS20005516A-page 1 2N6661 1.0ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
† Drain-to-source voltage .........................................................................................................................................
