Datasheet Details
| Part number | 2N6660 |
|---|---|
| Manufacturer | Microchip Technology |
| File Size | 292.59 KB |
| Description | N-Channel Enhancement-Mode Vertical DMOS FET |
| Datasheet | 2N6660-Microchip.pdf |
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Overview: 2N6660 N-Channel, Enhancement-Mode, Vertical DMOS FET.
| Part number | 2N6660 |
|---|---|
| Manufacturer | Microchip Technology |
| File Size | 292.59 KB |
| Description | N-Channel Enhancement-Mode Vertical DMOS FET |
| Datasheet | 2N6660-Microchip.pdf |
|
|
|
2N6660 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a wellproven silicon-gate manufacturing process.
This combination produces a device with the power-handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N6660 | N-Channel Enhancement-Mode Vertical DMOS FETs | Supertex Inc |
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2N6660 | TMOS SWITCHING FET TRANSISTORS | Motorola Inc |
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2N6660 | N-Channel Enhancement Mode Power MOSFET | TT |
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2N6660 | N-Channel Power MOSFET | VPT |
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2N6660 | N-Channel MOSFET | Vishay Siliconix |
| Part Number | Description |
|---|---|
| 2N6661 | N-Channel Enhancement-Mode Vertical DMOS FET |