Datasheet Summary
N-Channel, Enhancement-Mode, Vertical DMOS FET
Features
- Free from secondary breakdown
- Low power drive requirement
- Ease of paralleling
- Low CISS and fast switching speeds
- Excellent thermal stability
- Integral source-drain diode
- High input impedance and high gain
Applications
- Motor controls
- Converters
- Amplifiers
- Switches
- Power supply circuits
- Drivers: relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.
Description
2N6660 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a wellproven silicon-gate manufacturing process. This bination produces a device with the power-handling capabilities...
