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2N6661 Datasheet PDF

TT 2N6661

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Part No. 2N6661
Datasheet 2N6661 Download
Manufacturer
TT
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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2N6661 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C unless otherwise stated) VDS Drain – Source Voltage 90V VGS Gate – Source Voltage ±20V ID Continuous Drain Current TC = 25°C 0.9A IDM Pulsed Drain Current (1) 3.0A PD Total Power Dissipation at TC ≤ 25°C 5W De-rate TC > 25°C 40mW/°C PD Total Power Dissipation at TA ≤ 25°C 725mW De-rate TA > 25°C 5.8mW/°C TJ Operating Temperature Range -55 to +150°C Tstg Storage Temperature Range -65 to +150°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case RθJA Thermal Resistance, Junction To Ambient Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) Pulse Width ≤ 300us, δ ≤ 2% Max. 25 172 Units °C/W °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
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