| Part number | 2N6661 |
|---|---|
| Datasheet | 2N6661-TT.pdf |
| File Size | 77.49 KB |
| Manufacturer | TT Electronics |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Pulse width limited by maximum junction temperature (2) Pulse Width ≤ 300us, δ ≤ 2% Max. 25 172 Units °C/W °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2N6661 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Seme LAB |
 |
2N6661 | N-Channel Enhancement-Mode Vertical DMOS FETs | Supertex Inc |
 |
2N6661 | TMOS SWITCHING FET TRANSISTORS | Motorola Inc |
 |
2N6661 | N-Channel MOSFET | Vishay Siliconix |
 |
2N6661 | N-Channel Power MOSFET | VPT |
See all TT Electronics datasheets
| Part Number | Description |
|---|---|
| 2N6660 | N-Channel Enhancement Mode Power MOSFET |
| 2N6659X | N-CHANNEL ENHANCEMENT MODE MOSFET |
| 2N6059 | SILICON MULTI-EPITAXIAL NPN TRANSISTOR |
| 2N6277 | SILICON MULTI-EPITAXIAL NPN TRANSISTOR |
| 2N6796 | N-CHANNEL POWER MOSFET |
| 2N6849 | P-CHANNEL POWER MOSFET |
| 2N6851 | P-CHANNEL POWER MOSFET |
| 2N697 | GENERAL PURPOSE SILICON NPN TRANSISTOR |
