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2N6668 - SILICON PNP POWER DARLINGTON TRANSISTOR

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2N6668 SILICON PNP POWER DARLINGTON TRANSISTOR s s s SGS-THOMSON PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS: GENERAL PURPOSE SWITCHING s GENERAL PURPOSE SWITCHING AND AMPLIFIER s 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM R1(typ) = 8 kΩ R2(typ) = 120 Ω ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 25 o C Storage Temperature Max. Operating Junction Temperature Value 80 80 5 10 15 250 65 -65 to 150 150 Unit V V V A A mA W o o C C For PNP type voltage and current values are negative.