Datasheet Summary
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N6667/D
2N6609 (See 2N3773)
Darlington Silicon Power Transistors
. . . designed for general- purpose amplifier and low speed switching applications.
- High DC Current Gain
- hFE = 3500 (Typ) @ IC = 4 Adc
- Collector- Emitter Sustaining Voltage
- @ 200 mAdc VCEO(sus) = 60 Vdc (Min)
- 2N6667 VCEO(sus) = 80 Vdc (Min)
- 2N6668
- Low Collector- Emitter Saturation Voltage
- VCE(sat) = 2 Vdc (Max) @ IC = 5 Adc
- Monolithic Construction with Built- In Base- Emitter Shunt Resistors
- TO- 220AB pact Package
- plementary to 2N6387, 2N6388
COLLECTOR
2N6667 2N6668
PNP SILICON DARLINGTON POWER TRANSISTORS 10 AMPERES...
