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2N6668 Datasheet PDF

onsemi 2N6668

DARLINGTON POWER TRANSISTORS

Part No. 2N6668
Datasheet 2N6668 Download
Manufacturer
onsemi
Description DARLINGTON POWER TRANSISTORS
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2N6668 datasheet page 1 preview

MAXIMUM RATINGS

(Note 1) Rating Symbol VCEO VCB VEB IC IB 2N6667 60 60 2N6668 80 80 Unit Vdc Vdc Vdc Adc Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage 5.0 10 15 Collector Current − Continuous − Peak Base Current 250 mAdc W W/_C W W/_C _C Total Device Dissipation @ TC = 25_C Derate above 25_C Total Device Dissipation @ TA = 25_C Derate above 25_C PD PD 65 0.52 2.0 0.016 Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 150 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 2N6667, 2N6668 THERMAL CHARACTERISTICS Characteristic Symbol RqJC RqJA Max Unit Thermal Resistance, Junction to Case 1.92 62.5 _C/W _C/W Thermal Resistance, Junction to Ambient ELECTRICAL CHARACTE...
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