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2N6935 Datasheet Preview

2N6935 Datasheet

Silicon NPN Power Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·High Switching Speed
·Wide Area of Safe Operation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for off-line power suppliesswitching regulator
and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
650
V
400
V
VEBO
Emitter-Base voltage
8
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
23
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
5
A
175
W
150
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-65~150
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 0.71 /W
2N6935
isc websitewww.iscsemi.com
isc & iscsemi is registered trademark




Inchange Semiconductor

2N6935 Datasheet Preview

2N6935 Datasheet

Silicon NPN Power Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE=
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1m A; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 15A; IB= 3.0A
VBE(sat) Base-Emitter Saturation Voltage
IC= 15A; IB= 3.0A
ICBO
Collector Cutoff Current
VCB= 650V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 8V; IC= 0
hFE
DC Current Gain
IC= 15A ; VCE= 3V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
Switching Times
td
Delay Time
Tr
Rise Time
tstg
Storage Time
tf
Fall Time
IC= 15A, IB1= -IB2= 3A
RL= 20Ω; VCC= 300V
2N6935
MIN TYP. MAX UNIT
650
V
400
V
8
V
1.0
V
1.5
V
100 μA
100 μA
8
35
150
pF
0.1 μs
0.7 μs
2.5 μs
0.5 μs
isc websitewww.iscsemi.com
isc & iscsemi is registered trademark


Part Number 2N6935
Description Silicon NPN Power Transistor
Maker Inchange Semiconductor
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