2N6933 - NPN Transistor

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for off-line power supplies，switching regulator and gene

INCHANGE

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Datasheet Details

Part number	2N6933
Manufacturer	INCHANGE
File Size	194.87 KB
Description	NPN Transistor
Datasheet	2N6933 Datasheet
Additional preview pages of the 2N6933 datasheet.

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Full PDF Text Transcription

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for off-line power supplies，switching regulator and general purpose applications.

Published: Sep 4, 2020 |