2N6935 - Silicon NPN Power Transistor

Datasheet Summary

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for off-line power supplies，switching regulator and gene

Inchange Semiconductor

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Datasheet Details

Part number	2N6935
Manufacturer	Inchange Semiconductor
File Size	191.04 KB
Description	Silicon NPN Power Transistor
Datasheet	2N6935 Datasheet
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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for off-line power supplies，switching regulator and general purpose applications.

Published: Dec 12, 2011 |