Datasheet Details
| Part number | 2N6935 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.04 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2N6935_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2N6935 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.04 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2N6935_InchangeSemiconductor.pdf |
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for off-line power supplies，switching regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 650 V 400 V VEBO Emitter-Base voltage 8 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 23 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 175 W 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~150 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.71 ℃/W 2N6935 isc website：.iscsemi.
isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
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