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2SA1011 Datasheet Preview

2SA1011 Datasheet

POWER TRANSISTOR

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sc Silicon PNP Power Transistor
2SA1011
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= -0.5V(Typ.)@ IC= -0.5A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min.)
·Complement to Type 2SC2344
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high-voltage switching, audio frequency power
amplifiers, 100W output predriver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-180
V
VCEO Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-1.5
A
ICM
Collector Current-Peak
-3.0
A
PC
Total Power Dissipation@ TC=25
25
W
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1
isc & iscsemi is registered trademark




Inchange Semiconductor

2SA1011 Datasheet Preview

2SA1011 Datasheet

POWER TRANSISTOR

No Preview Available !

isc Silicon PNP Power Transistor
2SA1011
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE=
-160
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= -1mA; IE= 0
-180
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -10mA; IC= 0
-6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA
-0.5
V
VBE(on) Base-Emitter On Voltage
IC= -10mA; VCE= -5V
-1.5
V
ICBO
Collector Cutoff Current
VCB= -120V; IE= 0
-10 μA
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
-10 μA
hFE
DC Current Gain
IC= -0.3A; VCE= -5V
60
200
fT
Current-Gain—Bandwidth Product
IC= -50mA ; VCE= -10V
100
MHz
COB
Output Capacitance
IE= 0; VCB= -10V; ftest= 1.0MHz
30
pF
hFE Classifications
D
E
60-120 100-200
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2
isc & iscsemi is registered trademark


Part Number 2SA1011
Description POWER TRANSISTOR
Maker Inchange Semiconductor
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