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2SA1011 - POWER TRANSISTOR

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Description

Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Typ.)@ IC= -0.5A Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min.) Complement to Type 2SC2344 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-vol

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Datasheet Details

Part number 2SA1011
Manufacturer Inchange Semiconductor
File Size 203.48 KB
Description POWER TRANSISTOR
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sc Silicon PNP Power Transistor 2SA1011 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Typ.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min.) ·Complement to Type 2SC2344 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage switching, audio frequency power amplifiers, 100W output predriver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak -3.
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