Datasheet Details
| Part number | 2SA1011 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.48 KB |
| Description | POWER TRANSISTOR |
| Download | 2SA1011 Download (PDF) |
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| Part number | 2SA1011 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.48 KB |
| Description | POWER TRANSISTOR |
| Download | 2SA1011 Download (PDF) |
|
|
|
·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Typ.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min.) ·Complement to Type 2SC2344 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage switching, audio frequency power amplifiers, 100W output predriver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak -3.0 A PC Total Power Dissipation@ TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1011 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
sc Silicon PNP Power Transistor 2SA1011.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA1011 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
| Part Number | Description |
|---|---|
| 2SA1015 | Silicon PNP Power Transistors |
| 2SA1001 | Silicon PNP Power Transistor |
| 2SA1003 | Silicon PNP Power Transistor |
| 2SA1007 | Silicon PNP Power Transistor |
| 2SA1008 | POWER TRANSISTOR |
| 2SA1009 | Silicon PNP Power Transistor |
| 2SA1021 | POWER TRANSISTOR |
| 2SA1028 | Silicon PNP Power Transistor |
| 2SA1040 | Silicon PNP Power Transistors |
| 2SA1041 | POWER TRANSISTOR |