Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-0.1A ; IB=B 0
V(BR)EBO Emitter-base breakdown voltage
IE=-0.01A ; IC=0
VCEsat Collector-emitter saturation voltage IC=-5A ;IB=B -0.5A
VBE Base-emitter on voltage
IC=-5A ; VCE=-5V
ICBO Collector cut-off current
VCB=-140V; IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
hFE-2
DC current gain
IC=-5A ; VCE=-5V
Cob Output capacitance
IE=0 ; VCB=-10V;f=1MHz
fT Transition frequency
IC=-1A ; VCE=-10V
hFE-1 classifications
ROY
55-110 80-160 120-240
Product Specification
2SA1094
MIN TYP. MAX UNIT
-140
V
-5 V
-2.0 V
-2.0 V
-50 μA
-50 μA
55 240
30
220 pF
70 MHz
2
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