2SA1094 - Silicon PNP Transistor

Toshiba

Key Features

High Breakdown Voltage : VcE0=~140V.
High Transition Frequency : fx=70MHz (Typ. ).
Complementary to 2SC2564.
Recommended for 80W High-Fidelity Audio Frequency Amplifier Output Stage. Unit in mm.

2SA1094 silicon pnp transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SA1094
Manufacturer	Toshiba
File Size	96.94 KB
Description	Silicon PNP Transistor
Datasheet	2SA1094 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: 2SA1094 I SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage : VcE0=~140V • High Transition Frequency : fx=70MHz (Typ.) • Complementary to 2SC2564. • Recommended for 80W High-Fidelity Audio Frequency Amplifier Output Stage. Unit in mm MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power .Dissipation CTc=25°C) Junction Temperature Storage Temperature Range SYMBOL VcBO v CEO VEBO ic IE RATING UNIT -140 -140 -5 -12 12 PC Ti -stg 120 150 -55^150 °C 1. BASE 2. COLLECTOR(HEAT SINK) 3. EMITTER 2 - 34 A 1 A Weight : 10.