Datasheet Summary
:
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS.
Features
- High Breakdown Voltage : VcE0=~140V
- High Transition Frequency : fx=70MHz (Typ.)
- plementary to 2SC2564.
- Remended for 80W High-Fidelity Audio Frequency Amplifier Output Stage.
Unit in mm
MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current Emitter Current Collector Power .Dissipation
CTc=25°C) Junction Temperature Storage Temperature Range
SYMBOL VcBO v CEO VEBO ic IE
RATING UNIT -140 -140 -5 -12 12
Ti -stg
120 150 -55^150
°C
1. BASE 2. COLLECTOR(HEAT SINK) 3. EMITTER
- 34 A 1 A Weight : 10....
