2SA1095 - Silicon PNP Transistor

Toshiba

Key Features

High Breakdown Voltage : Vceo=-160V.
High Transition Frequency : f T=60MHz (Typ. ).
Complementary to 2SC2565.
Recommended for 100W High-Fidelity Audio Frequency Amplifier Output Stage. 34.3MAX Unit in mm 5.3MAX.

2SA1095 silicon pnp transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SA1095
Manufacturer	Toshiba
File Size	95.83 KB
Description	Silicon PNP Transistor
Datasheet	2SA1095 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: I 1 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage : Vceo=-160V • High Transition Frequency : f T=60MHz (Typ.) • Complementary to 2SC2565. • Recommended for 100W High-Fidelity Audio Frequency Amplifier Output Stage. 34.3MAX Unit in mm 5.3MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VcBO VCEO v EBO ic T stg RATING -160 -160 -5 -15 15 150 150 -55M.50 UNIT V 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER JEDEC TOSHIBA 2 - 34A1A Weight : 10.