High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -60V (Min)
Good Linearity of hFE
Complement to Type 2SC2497A
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for low-frequency power amplification
ABSOLUTE MAXIMUM
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isc Silicon PNP Power Transistor
2SA1096A
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -60V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2497A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low-frequency power amplification
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-70
V
VCEO Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-2
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ Ta=25℃ PC
Total Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-3
A
1.2 W
5
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.
2SA1096A Datasheet
