Datasheet Details
| Part number | 2SA1093 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 221.87 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1093_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA1093 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 221.87 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1093_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Good Linearity of hFE ·Complement to Type 2SC2563 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications ·Recommend for 50W audio amplifier output stage ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.8 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1093 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1093 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A;
IB= -0.4A VBE(on) Base-Emitter On Voltage IC= -4A ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1093 | Silicon PNP Transistor | Toshiba |
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2SA1093 | SILICON POWER TRANSISTOR | SavantIC |
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| 2SA1003 | Silicon PNP Power Transistor |
| 2SA1007 | Silicon PNP Power Transistor |
| 2SA1008 | POWER TRANSISTOR |
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| 2SA1011 | POWER TRANSISTOR |