Datasheet Details
| Part number | 2SA1094 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 222.39 KB |
| Description | Power Transistor |
| Datasheet | 2SA1094_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1094.
| Part number | 2SA1094 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 222.39 KB |
| Description | Power Transistor |
| Datasheet | 2SA1094_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2564 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommended for 80W high-fidelity audio frequency amplifier output stage ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IE Emitter Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -0.01A;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1094 | Silicon PNP Transistor | Toshiba |
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2SA1094 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
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| 2SA1096A | POWER TRANSISTOR |
| 2SA1001 | Silicon PNP Power Transistor |
| 2SA1003 | Silicon PNP Power Transistor |
| 2SA1007 | Silicon PNP Power Transistor |
| 2SA1008 | POWER TRANSISTOR |
| 2SA1009 | Silicon PNP Power Transistor |
| 2SA1011 | POWER TRANSISTOR |