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Power Transistors
2SC2497, 2SC2497A
Silicon NPN epitaxial planar type
Unit: mm
For low-frequency power amplification Complementary to 2SA1096 and 2SA1096A I Features
• High collector to emitter voltage VCEO • TO-126B package which requires no insulation plate for installation to the heat sink
8.0+0.5 –0.1 φ 3.16±0.1
3.8±0.3 11.0±0.5
3.2±0.2
1.9±0.1
I Absolute Maximum Ratings TC = 25°C
Parameter Collector to base voltage Collector to emitter voltage 2SC2497 2SC2497A VEBO ICP IC PC Tj Tstg Symbol VCBO VCEO Rating 70 50 60 5 3 1.5 1.2 *1 5 *2 Junction temperature Storage temperature 150 −55 to +150 °C °C V A A W Unit V V
1 2 0.75±0.1 4.6±0.2 0.5±0.1 0.5±0.1 2.3±0.2 3 1.76±0.1
16.0±1.
2SA1096 Datasheet
