Part 2SA1096A
Description Silicon NPN Transistor
Category Transistor
Manufacturer Panasonic
Size 70.04 KB
Panasonic
2SA1096A

Overview

  • High collector to emitter voltage VCEO
  • TO-126B package which requires no insulation plate for installation to the heat sink
  • 0+0.5 -0.1 φ 3.16±0.1
  • 8±0.3 11.0±0.5
  • 2±0.2
  • 9±0.1 I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage 2SC2497 2SC2497A VEBO ICP IC PC Tj Tstg Symbol VCBO VCEO Rating 70 50 60 5 3 1.5 1.2 *1 5 *2 Junction temperature Storage temperature 150 -55 to +150 °C °C V A A W Unit V V 1 2 0.75±0.1 4.6±0.2 0.5±0.1 0.5±0.1 2.3±0.2 3 1.76±0.1
  • 0±1.0 Emitter to base voltage Peak collector current Collector current Collector power dissipation 1 : Emitter 2 : Collector 3 : Base TO-126B-A1 Package Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink I Electrical Characteristics TC = 25°C Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SC2497 2SC2497A hFE VCE(sat) VBE(sat) fT Cob VCE = 5 V, IC = 1 A IC = 1.5 A, IB = 0.15 A IC = 1.5 A, IB = 0.15 A VCB = 5 V, IE = - 0.5 A, f = 200 MHz VCB = 20 V, IE = 0, f = 1 MHz 150 35 IEBO VCBO VCEO Conditions VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 VEB = 5 V, IC = 0 IC = 1 mA, IE = 0 IC = 2 mA, IB = 0 70 50 60 80 220 1 1.5 V V MHz pF Min Typ Max 1 100 10 Unit µA µA µA V V Forward current transfer ratio * Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Note) *: Rank classification Rank hFE R 80 to 160 S 120 to 220 188
  • 05±0.1 Power Transistors PC  T a 6