2SA1091
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
- High voltage: VCBO =
- 300 V, VCEO =
- 300 V
- Low saturation voltage: VCE (sat) =
- 0.5 V (max)
- Small collector output capacitance: Cob = 6 p F (typ.)
- plementary to 2SC2551.
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
- 300
Collector-emitter voltage
VCEO
- 300
Emitter-base voltage
VEBO
- 8 V
Collector current
- 100 m A
Base current Collector power dissipation Junction temperature Storage temperature range
- 20 m A
PC 400 m W
Tj 150 °C
Tstg
- 55~150
°C
JEDEC JEITA TOSHIBA
TO-92 SC-43 2-5F1B
Note: Using continuously under heavy loads (e.g. the application of...
