900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Inchange Semiconductor

2SA1291 Datasheet Preview

2SA1291 Datasheet

POWER TRANSISTOR

No Preview Available !

isc Silicon PNP Power Transistor
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= -0.4V(Max.)@IC= -5A
·Fast Switching Speed
·Complement to Type 2SC3255
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Various inductance lamp drivers for electrical equipment.
·Inverters, converters(strobo, flash, fluorescent lamp lighting
circuits).
·Power amplifier (high power car stereo, motor controller).
·High-speed switching (switching regulator, driver).
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-80
V
VCEO Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
-12
A
40
W
150
Tstg
Storage Temperature Range
-55~150
2SA1291
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

2SA1291 Datasheet Preview

2SA1291 Datasheet

POWER TRANSISTOR

No Preview Available !

isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE=
V(BR)CBO Collector-Base Breakdown Voltage
IC= -1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.25A
ICBO
Collector Cutoff Current
VCB= -40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE
DC Current Gain
IC= -1A; VCE= -2V
hFE Classifications
Q
R
S
70-140 100-200 140-280
2SA1291
MIN TYP. MAX UNIT
-60
V
-80
V
-5
V
-0.4
V
-100 μA
-100 μA
70
280
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2SA1291
Description POWER TRANSISTOR
Maker Inchange Semiconductor
PDF Download

2SA1291 Datasheet PDF






Similar Datasheet

1 2SA1290 PNP/NPN Transistors
Sanyo Semicon Device
2 2SA1290 SILICON POWER TRANSISTOR
SavantIC
3 2SA1290 POWER TRANSISTOR
Inchange Semiconductor
4 2SA1291 PNP/NPN Transistors
Sanyo Semicon Device
5 2SA1291 SILICON POWER TRANSISTOR
SavantIC
6 2SA1291 POWER TRANSISTOR
Inchange Semiconductor
7 2SA1292 PNP/NPN Epitaxial Planar Silicon Transistors
Sanyo Semicon Device
8 2SA1292 SILICON POWER TRANSISTOR
SavantIC
9 2SA1292 POWER TRANSISTOR
Inchange Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy