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2SA1357 - Silicon PNP Power Transistor

Description

High Collector Current-IC= -5.0A DC Current Gain- : hFE= 70(Min)@IC= -4A Low Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -4A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Strobe flash applications.

Audio power amplifie

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Datasheet Details

Part number 2SA1357
Manufacturer Inchange Semiconductor
File Size 211.08 KB
Description Silicon PNP Power Transistor
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isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current-IC= -5.0A ·DC Current Gain- : hFE= 70(Min)@IC= -4A ·Low Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Strobe flash applications. ·Audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -5 A ICP Collector Current-Pulse -8 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -1 A 10 W 1.
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