2SA1357 datasheet by Toshiba.
| Part number | 2SA1357 |
|---|---|
| Datasheet | 2SA1357_ToshibaSemiconductor.pdf |
| File Size | 196.62 KB |
| Manufacturer | Toshiba |
| Description | Silicon PNP Epitaxial Type Transistor |
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.DataSheet.co.kr 2SA1357 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1357 Strobe Flash Applications Audio Power Amplifier Applications Unit: mm hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) Low saturation voltage: VCE (sat) = −1.0 V (max) (IC = −4 A, IB = −0.1 A) High power dissipation:.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SA1357 | Silicon PNP Power Transistor | Inchange Semiconductor |
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2SA1357 | PNP Transistor | JCET |
| Part Number | Description |
|---|---|
| 2SA1356 | Silicon PNP Epitaxial Type Transistor |
| 2SA1358 | Silicon PNP Transistor |
| 2SA1359 | Silicon PNP Transistor |
| 2SA1300 | TRANSISTOR |
| 2SA1304 | TRANSISTOR |
| 2SA1312 | Silicon PNP Transistor |
| 2SA1313 | Silicon PNP Transistor |
| 2SA1314 | TRANSISTOR |
| 2SA1315 | TRANSISTOR |
| 2SA1316 | Silicon PNP Epitaxial Type Transistor |
