2SA1357 Datasheet | Toshiba

.Data Sheet.co.kr TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Strobe Flash Applications Audio Power Amplifier Applications Unit: mm - - - - h FE(1) = 100 to 320 (VCE = - 2 V, IC = - 0.5 A) h FE(2) = 70 (min) (VCE = - 2 V, IC = - 4 A) Low saturation voltage: VCE (sat) = - 1.0 V (max) (IC = - 4 A, IB = - 0.1 A) High power dissipation: PC = 10 W (Tc = 25°C), PC = 1.5 W (Ta = 25°C) Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulsed (Note 1) Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating - 35 - 20 - 8 - 5 - 8 - 1 1.5 10 150 - 55 to 150 A Unit V V V JEDEC JEITA TOSHIBA ― ― 2-8H1A A W °C °C Weight: 0.82 g (typ.) Note 1: Pulse test: Pulse width = 10 ms (max) Duty cycle = 30% (max) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2006-11-09 Datasheet pdf - http://..net/ .Data Sheet.co.kr Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO h FE (1) DC current gain (Note 3) h FE (2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE (sat) VBE f T Cob Test Condition VCB = - 35 V, IE = 0 VEB = - 8 V, IC = 0 IC = - 10 m A, IB =...