Datasheet Details
| Part number | 2SA1357 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.08 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1357-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA1357 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.08 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1357-InchangeSemiconductor.pdf |
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·High Collector Current-IC= -5.0A ·DC Current Gain- : hFE= 70(Min)@IC= -4A ·Low Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Strobe flash applications.
·Audio power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -5 A ICP Collector Current-Pulse -8 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -1 A 10 W 1.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1357 isc website： .iscsemi.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA1357 | Silicon PNP Epitaxial Type Transistor | Toshiba Semiconductor |
 |
2SA1357 | PNP Transistor | JCET |
| Part Number | Description |
|---|---|
| 2SA1352 | Silicon PNP Power Transistor |
| 2SA1355 | POWER TRANSISTOR |
| 2SA1358 | Silicon PNP Power Transistor |
| 2SA1359 | POWER TRANSISTOR |
| 2SA1301 | Silicon PNP Power Transistor |
| 2SA1302 | Silicon PNP Power Transistor |
| 2SA1303 | POWER TRANSISTOR |
| 2SA1304 | POWER TRANSISTOR |
| 2SA1305 | POWER TRANSISTOR |
| 2SA1308 | POWER TRANSISTOR |