High Collector Current-IC= -5.0A
DC Current Gain-
: hFE= 70(Min)@IC= -4A
Low Saturation Voltage
: VCE(sat)= -1.0V(Max)@IC= -4A
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
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isc Silicon PNP Power Transistor
DESCRIPTION ·High Collector Current-IC= -5.0A ·DC Current Gain-
: hFE= 70(Min)@IC= -4A ·Low Saturation Voltage
: VCE(sat)= -1.0V(Max)@IC= -4A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Strobe flash applications. ·Audio power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-35
V
VCEO
Collector-Emitter Voltage
-20
V
VEBO
Emitter-Base Voltage
-8
V
IC
Collector Current-Continuous
-5
A
ICP
Collector Current-Pulse
-8
A
IB
Base Current-Continuous
Collector Power Dissipation
@ TC=25℃ PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
-1
A
10 W
1.
2SA1357 Datasheet
