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2SA1358 - Silicon PNP Power Transistor

Description

High Collector-Emitter Breakdown Voltage : V(BR)CEO= -120V(Min) Complement to Type 2SC3421 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for audio frequency power amplifier applications.

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Datasheet Details

Part number 2SA1358
Manufacturer Inchange Semiconductor
File Size 196.62 KB
Description Silicon PNP Power Transistor
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isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage : V(BR)CEO= -120V(Min) ·Complement to Type 2SC3421 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -0.1 A 10 W 1.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1358 isc website： www.iscsemi.
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