With TO-252(DPAK) packaging
Excellent linearity of hFE
Low collector-to-emitter saturation voltage
Fast switching speed
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio frequency power amplifier applicat
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isc Silicon PNP Power Transistor
2SA1358-Z
DESCRIPTION ·With TO-252(DPAK) packaging ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1
A
IB
Base Current-Continuous
Collector Power Dissipation
@ TC=25℃ PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
-0.1
A
10 W
1.5
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website： www.iscsemi.
2SA1358-Z Datasheet
