Datasheet Details
| Part number | 2SA1358-Z |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.29 KB |
| Description | PNP Transistor |
| Datasheet | 2SA1358-Z-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1358-Z.
| Part number | 2SA1358-Z |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.29 KB |
| Description | PNP Transistor |
| Datasheet | 2SA1358-Z-INCHANGE.pdf |
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·With TO-252(DPAK) packaging ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -0.1 A 10 W 1.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1358-Z ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1358 | Silicon PNP Transistor | Toshiba Semiconductor |
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2SA1358 | Silicon PNP Power Transistor | Inchange Semiconductor |
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