2SA1358 Overview
·High Collector-Emitter Breakdown Voltage : V(BR)CEO= -120V(Min) ·plement to Type 2SC3421 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1358 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter...
