Datasheet Details
| Part number | 2SA1358 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.62 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1358-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA1358 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.62 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1358-InchangeSemiconductor.pdf |
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·High Collector-Emitter Breakdown Voltage : V(BR)CEO= -120V(Min) ·plement to Type 2SC3421 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -0.1 A 10 W 1.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1358 isc website： .iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1358 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1358 | Silicon PNP Transistor | Toshiba Semiconductor |
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2SA1358-Z | PNP Transistor | INCHANGE |
| Part Number | Description |
|---|---|
| 2SA1352 | Silicon PNP Power Transistor |
| 2SA1355 | POWER TRANSISTOR |
| 2SA1357 | Silicon PNP Power Transistor |
| 2SA1359 | POWER TRANSISTOR |
| 2SA1301 | Silicon PNP Power Transistor |
| 2SA1302 | Silicon PNP Power Transistor |
| 2SA1303 | POWER TRANSISTOR |
| 2SA1304 | POWER TRANSISTOR |
| 2SA1305 | POWER TRANSISTOR |
| 2SA1308 | POWER TRANSISTOR |