Datasheet4U Logo Datasheet4U.com

2SA1386 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

General Description

·Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)-2SA1386 = -180V(Min)-2SA1386A ·Good Linearity of hFE ·Complement to Type 2SC3519/A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT 2SA1386 -160 VCBO Collector-Base Voltage V 2SA1386A -180 2SA1386 -160 VCEO Collector-Emitter Voltage V 2SA1386A -180 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -4 A 130 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1386/A isc website: www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage 2SA1386 2SA1386A IC= -25mA ;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A;

IB= -0.5A ICBO Collector Cutoff Current 2SA1386 VCB= -160V;

Overview

isc Silicon PNP Power Transistors.