Datasheet Summary
isc Silicon PNP Power Transistors
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
V(BR)CEO= -160V(Min)-2SA1386 = -180V(Min)-2SA1386A
- Good Linearity of hFE
- plement to Type 2SC3519/A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for audio and general purpose...
