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2SA1386A - PNP Transistor

Download the 2SA1386A datasheet PDF. This datasheet also covers the 2SA1386 variant, as both devices belong to the same pnp transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)-2SA1386 = -180V(Min)-2SA1386A Good Linearity of hFE Complement to Type 2SC3519/A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SA1386_InchangeSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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2SA1386 PNP Transistor Inchange Semiconductor

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc Silicon PNP Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)-2SA1386 = -180V(Min)-2SA1386A ·Good Linearity of hFE ·Complement to Type 2SC3519/A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT 2SA1386 -160 VCBO Collector-Base Voltage V 2SA1386A -180 2SA1386 -160 VCEO Collector-Emitter Voltage V 2SA1386A -180 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -4 A 130 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1386/A isc website