Datasheet Details
| Part number | 2SA1389 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.62 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1389_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1389.
| Part number | 2SA1389 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.62 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1389_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min) ·High Speed Switching ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High frequency power amplifiers ·Audio power amplifiers ·Switching regulators ·DC-DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -160 V -160 V -7 V -12 A 120 W 150 ℃ -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IE= -50μA;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA1389 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SA1383 | POWER TRANSISTOR |
| 2SA1386 | PNP Transistor |
| 2SA1387 | POWER TRANSISTOR |
| 2SA1388 | POWER TRANSISTOR |
| 2SA1301 | Silicon PNP Power Transistor |
| 2SA1302 | Silicon PNP Power Transistor |
| 2SA1303 | POWER TRANSISTOR |
| 2SA1304 | POWER TRANSISTOR |
| 2SA1305 | POWER TRANSISTOR |
| 2SA1308 | POWER TRANSISTOR |