Datasheet Details
| Part number | 2SA1387 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.01 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1387_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1387.
| Part number | 2SA1387 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.01 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1387_InchangeSemiconductor.pdf |
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·High DC Current Gain- : hFE= 150(Min.) @ IC= -1A ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@ IC= -3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -1 A 2 W 20 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA1387 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SA1383 | POWER TRANSISTOR |
| 2SA1386 | PNP Transistor |
| 2SA1388 | POWER TRANSISTOR |
| 2SA1389 | POWER TRANSISTOR |
| 2SA1301 | Silicon PNP Power Transistor |
| 2SA1302 | Silicon PNP Power Transistor |
| 2SA1303 | POWER TRANSISTOR |
| 2SA1304 | POWER TRANSISTOR |
| 2SA1305 | POWER TRANSISTOR |
| 2SA1308 | POWER TRANSISTOR |