Datasheet Details
| Part number | 2SA1383 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.16 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1383_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA1383 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.16 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1383_InchangeSemiconductor.pdf |
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·TO-220 package ·High Collector-Emitter Breakdown Voltage ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Adudio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.1 A Total Power Dissipation @TC=25℃ 10 PT W Total Power Dissipation @Ta=25℃ 1.5 TJ Junction Temperature Tstg Storage Temperature 150 ℃ -55~150 ℃ 2SA1383 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -1mA ;
RBE= ∞ VCE(sat) Collector-Emitter Saturation Voltage IC= -50mA;
IB= -5mA VBE(sat) Base-Emitter Saturation Voltage IC= -50mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1383 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SA1386 | PNP Transistor |
| 2SA1387 | POWER TRANSISTOR |
| 2SA1388 | POWER TRANSISTOR |
| 2SA1389 | POWER TRANSISTOR |
| 2SA1301 | Silicon PNP Power Transistor |
| 2SA1302 | Silicon PNP Power Transistor |
| 2SA1303 | POWER TRANSISTOR |
| 2SA1304 | POWER TRANSISTOR |
| 2SA1305 | POWER TRANSISTOR |
| 2SA1308 | POWER TRANSISTOR |